ao6408 20v n-channel mosfet symbol v ds v gs i dm t j , t stg symbol typ max 47.5 62.5 74 110 r q jl 37 40 absolute maximum ratings t a =25c unless otherwise noted parameter maximum units drain-source voltage 20 v gate-source voltage 12 v a t a =70c 7 pulsed drain current b 40 continuous drain current a t a =25c i d 8.8 t a =70c 1.28 w power dissipation t a =25c p d 2 steady-state c/w junction and storage temperature range -55 to 150 c thermal characteristics maximum junction-to-lead c steady-state c/w parameter units maximum junction-to-ambient a t 10s r q ja c/w maximum junction-to-ambient a features v ds (v) = 20v i d = 8.8a (v gs = 10v) r ds(on) < 18m w (v gs = 10v) r ds(on) < 20m w (v gs = 4.5v) r ds(on) < 25m w (v gs = 2.5v) r ds(on) < 32m w (v gs = 1.8v) esd rating: 2000v hbm esd protected 100% uis tested 100% rg tested general description the ao6408 uses advanced trench technology to provide excellent r ds(on) and low gate charge. it offers operation over a wide gate drive range from 1.8v to 12v. it is esd protected. this device is suitable f or use as a load switch. g d d s d d 12 3 65 4 tsop-6 top view g d s rev4: september 2010 www.aosmd.com page 1 of 4
ao6408 symbol min typ max units bv dss 20 v 10 t j =55c 25 i gss 10 m a bv gso 12 v v gs(th) 0.5 0.75 1 v i d(on) 40 a 14.4 18 t j =125c 18.5 23 16 20 m w 20.5 25 m w 25.6 32 m w g fs 33 s v sd 0.72 1 v i s 3 a c iss 1810 2200 pf c oss 232 pf c rss 200 pf r g 1.6 2.2 w q g 17.9 22 nc q gs 1.5 nc q gd 4.7 nc t d(on) 3.3 ns t r 5.9 ns t d(off) 44 ns t f 7.7 ns t rr 22 27 ns q rr 9.8 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice i f =8.8a, di/dt=100a/ m s i f =8.8a, di/dt=100a/ m s electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =250 m a, v gs =0v i dss zero gate voltage drain current v ds =16v, v gs =0v m a gate-source leakage current v ds =0v, v gs =10v gate threshold voltage v ds =v gs i d =250 m a v ds =0v, i g =250ua gate-source breakdown voltage r ds(on) static drain-source on-resistance v gs =10v, i d =8.8a m w v gs =4.5v, i d =8a v gs =2.5v, i d =6a v gs =1.8v, i d =4a forward transconductance v ds =5v, i d =8.8a diode forward voltage i s =1a on state drain current v gs =4.5v, v ds =5v reverse transfer capacitance turn-on rise time turn-off delaytime gate resistance v gs =0v, v ds =0v, f=1mhz maximum body-diode continuous current dynamic parameters input capacitance v gs =0v, v ds =10v, f=1mhz output capacitance body diode reverse recovery time body diode reverse recovery charge turn-off fall time switching parameters total gate charge v gs =4.5v, v ds =10v, i d =8.8a gate source charge gate drain charge turn-on delaytime v gs =10v, v ds =10v, r l =1.1 w , r gen =3 w a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any a given application depends on the use r's specific board design. the current rating is ba sed on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction t o lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using 80 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the soa curve provides a single pulse rating. rev3: augu st 2005 rev4: september 2010 www.aosmd.com page 2 of 4
ao6408 typical electrical and thermal characteristics 0 10 20 30 40 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics v gs =1.5v 2v 2.5v 4.5v 10v 0 4 8 12 16 20 0 0.5 1 1.5 2 2.5 i d (a) v gs(volts) figure 2: transfer characteristics 0 10 20 30 40 0 5 10 15 20 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics 25 c 125 c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =2.5v,6a v gs =10v, 8.8a v gs =4.5v, 8a 0 10 20 30 40 0 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage 25 c 125 c v ds =5v v gs =2.5v v gs =4.5v v gs =10v i d =6a v gs =1.8v, 4a v gs =1.8v 25 c 125 c rev4: september 2010 www.aosmd.com page 3 of 4
ao6408 typical electrical and thermal characteristics 0 1 2 3 4 5 0 4 8 12 16 20 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 400 800 1200 1600 2000 2400 2800 0 5 10 15 20 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 power (w) pulse width (s) figure 10: single pulse power rating junction- to-ambient (note e) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impe dance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note e) 100 m s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150 c t a =25 c 10 m s v ds =10v i d =8.8a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =62.5 c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150 c t a =25 c rev4: september 2010 www.aosmd.com page 4 of 4
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